| PART |
Description |
Maker |
| STGWT60V60DF STGW60V60DF |
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
|
STMicroelectronics
|
| STGW20V60DF STGWT20V60DF STGB20V60DF STGP20V60DF |
600 V, 20 A very high speed trench gate field-stop IGBT
Low thermal resistance
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
STMicroelectronics
|
| STGWT80V60F STGFW80V60F |
Low thermal resistance
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
|
STMicroelectronics
ST Microelectronics
|
| CM100TU-12F |
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/600 Volts
240 x 128 pixel format, CFL Backlight with power harness
|
POWEREX[Powerex Power Semiconductors]
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| 2N2905A |
HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
High Speed, Saturated Switch PNP Silicon Transistor(高速、饱和开关型PNP硅晶体管) 高速，饱和硅晶体管开关进步党（高速，饱和开关型进步党硅晶体管）
|
TT electronics Semelab, Ltd.
STMicroelectronics N.V.
SEME-LAB[Seme LAB]
|
| IGW40N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| RJP60F5DPM |
600 V - 40 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| IXGP16N60C2D1 IXGA16N60C2 |
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
HiPerFASTTM IGBT C2-Class High Speed IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
IXYS, Corp.
|
| STGW40H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
|
ST Microelectronics
|
| STGW20H65FB |
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
|
ST Microelectronics
|
